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crystallographic defects in diamond : ウィキペディア英語版
crystallographic defects in diamond

Imperfections in the crystal lattice of diamond are common. Such crystallographic defects in diamond may be the result of lattice irregularities or extrinsic substitutional or interstitial impurities, introduced during or after the diamond growth. The defects affect the material properties of diamond and determine to which type a diamond is assigned; the most dramatic effects are on the diamond color and electrical conductivity, as explained by the band theory.
The defects can be detected by different types of spectroscopy, including electron paramagnetic resonance (EPR), luminescence induced by light (photoluminescence, PL) or electron beam (cathodoluminescence, CL), and absorption of light in the infrared (IR), visible and UV parts of the spectrum. Absorption spectrum is used not only to identify the defects, but also to estimate their concentration; it can also distinguish natural from synthetic or enhanced diamonds.
==Labeling of diamond centers==
There is a tradition in diamond spectroscopy to label a defect-induced spectrum by a numbered acronym (e.g. GR1). This tradition has been followed in general with some notable deviations, such as A, B and C centers. Many acronyms are confusing though:
*Some symbols are too similar (e.g., 3H and H3).
*Accidentally, same labels were given to different centers detected by EPR and optical techniques (e.g., N3 EPR center and N3 optical center have no relation).〔
*Whereas some acronyms are logical, such as N3 (N for natural, i.e. observed in natural diamond) or H3 (H for heated, i.e. observed after irradiation and heating), many are not. In particular, there is no clear distinction between the meaning of labels GR (general radiation), R (radiation) and TR (type-II radiation).〔

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